With the introduction of new semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN), we are entering a new era of MOSFET technology. Applications in industry, traction, medicine, and aerospace require components that can handle higher performance in smaller spaces—and at more extreme temperatures.
Sophisticated MOSFET cooling is essential to enable these new semiconductors to reach their full potential. Efficient cooling solutions not only ensure performance, but also the reliability and service life of the systems.
In this article, we focus on the challenges posed by new semiconductor materials and our solution from Miba.
Compared to traditional silicon components, the new SiC and GaN semiconductors enable significantly
However, higher power densities and smaller sizes lead to a critical bottleneck: efficient heat dissipation. Without adapted MOSFET cooling, modern modules cannot deliver their full benefits – overheating, power losses, and a shorter service life would be the result.
This calls for new cooling technologies that:
Modern SiC (silicon carbide) and GaN (gallium nitride) modules offer specific advantages—and thus new requirements for MOSFET cooling:
SiC modules are made of silicon carbide and are designed for maximum loads:
GaN modules use gallium nitride as their material and offer special advantages:
Applications for SiC and GaN modules are diverse and demanding:
Cooling concepts for HEMT-based GaN modules
Many GaN power transistors are based on HEMT technology (High Electron Mobility Transistor), which enables particularly fast and low-loss switching processes thanks to its extremely high electron mobility. However, these HEMT-based structures also generate high local heat loads. Our heat sink solutions are therefore specially designed to ensure safe and efficient heat dissipation even in HEMT-based GaN modules.
These new generations of materials make it clear that without highly efficient, specially adapted MOSFET cooling, SiC and GaN modules cannot deliver their full benefits. Innovative cooling concepts are the key to optimizing the use of these technologies.
At Miba, we recognized this early on and have successfully completed developments specifically for SiC and GaN modules. With our vacuum-brazed heat sinks, we offer a technology that is capable of meeting the extreme requirements of the latest generation of high-performance electronics. Our solutions in the field of MOSFET cooling guarantee reliable heat dissipation even at the highest power densities and temperatures. By using state-of-the-art manufacturing technologies and precise adaptation to specific module designs, we ensure that SiC and GaN modules can deliver their full performance potential. Our heat sinks are optimally designed for modules such as the Cree SiC Six-Pack Power Module or the Infineon CoolSiC™ XHP2 and offer maximum efficiency and operational reliability.
Our vacuum-brazed heat sinks offer numerous features that are specially designed to meet the requirements of modern MOSFET cooling:
This enables us to provide safe and efficient cooling for state-of-the-art SiC and GaN modules used in applications such as electric mobility, wind power, and demanding industrial applications.
The next generation of high-performance electronics is here – with SiC- and GaN-based modules that enable maximum efficiency and power density. Reliable MOSFET cooling is essential for these technologies to reach their full potential.
In this article, we have shown how modern semiconductor materials have changed cooling requirements and why conventional solutions no longer meet these demands.
Our vacuum-brazed heat sinks offer the right answer: They ensure
— perfectly tailored to the challenges of the latest SiC and GaN modules.
With our innovative cooling technologies, Miba is well prepared for the future. As a strong partner, we support our customers in reaching the next level of power electronics safely and efficiently.
Would you like to learn more about our MOSFET cooling solutions or do you have specific projects in the field of SiC and GaN?
Contact us – we look forward to your challenges!
